Richard Bube was a professor of solid state physics at Stanford U., as well as an evangelical Christian. In these roles, he discussed issues of science and faith with countless students and other teachers in the highly diverse and intelligent culture of Stanford over many years. This book summarizes his taxonomy of approaches to science and faith that he found in this environment. It is both empathetic and critical of all the seven patterns, and as such it is the best available outline of this field that I have seen -- a field which deals with the most profound questions of modern life. Highly recommended for students of this subject.

Bube really achieves his objective of 'Putting it all together'. Unlike most books on the relationship between science and the Christian faith, this one is not a defense of the author's position only. The author carefully explains different ways of relating science and theology based on a conflict model, a compartementalization model, and a complementarity model. In this framework he fits in naturalism or scientism, creation science, the use of science for apologetics, liberal theology and the New Age movement. The author's own position is a complementarity model.

This book contains some descriptions and explanations of rarely used physical effects. For example: "Frozen conductivity". This effect has allowed me to create a new device to modeling a neuron.

A large number of photoinduced phenomena associated with the photoinduced (PI) defects creation have been reported in the past. Besides the fundamental interest, these phenomena are practically important due to their influence on the performance and stability of semiconductor devices such as solar cells and laser diodes. The book by Redfield and Bube gives a comprehensive review of the subject. To my opinion the authors review the most important PI defects in crystalline and amorphous semiconductors focusing on the existing models without mathematical complications and emphasizing the need for more sophisticated many electron models.

The authors start with a review of the basic definitions and terminology of metastable defects. Some of the concepts in this chapter were discussed too shortly and it would be much more efficient if more details were given in particular to the audience of new comers to the field and for graduate students. Chapters 2 and 3 deal with defects in crystalline semiconductors with particular attention to DX and EL2 centers in III-V compounds. The bulk of these chapters is devoted mainly to PI defects as observed with electrical properties such as photoconductivity, resistivity and Hall mobility. Photoinduced changes in the optical properties of crystalline semiconductors associated with the defects creation are numerous, but they were ignored in these chapters and the topic is actually missing. A detailed review of the properties of photoinduced defects in hydrogenated amorphous silicon and their kinetics is given in chapters 4 and 5. These two chapters are well organized and informative. In chapter 6, a summary of PI defects in other amorphous semiconductors are summarized. In certain cases such as chalcogenide glasses, this summary is too short when compared to the amount of work done on PI defects in these materials. The last chapter summarizes the effect of PI defects in devices. This chapter is well written and provides a reasonable summary of the main effects, although the book is oriented more to the material aspects than to devices.

In summary the book is a survey of a large number of PI defects in semiconductors. The subject matter is generally well-organized, although many topics were mentioned too briefly and some significant information has been ignored. The amount of references is reasonable, however it is far from being complete and the book has an index. In my opinion the book can be invaluable as an introduction for those who are new to the field and for graduate students.

A pretty crummy book for the price. It's pretty short, the explanations aren't very good, and I don't particularly like the chosen topics either. You'd be better off with Kittel, and Kittel is a terrible book. I've read this, Kittel, Omar, Ashcroft+Mermin, and Burns, and this is the worst. It doesn't tell you enough to build a foundation for anything and I didn't find a single person in my class of 12 or so who liked this book. How bad is this book? I had to write my own table of physical constants on the inside cover because this book doesn't have them. I'd buy Omar instead, followed by Kittel, followed by anything else but Bube.

This book is a good place to go for explanations when you get lost in the muck of proofs. If you expect it to be rigorous, of course you will be disappointed. The synopses say it is for people who have never been through these topics before. This book is invaluable when you are going through notes and derivations and forget what the heck assumptions were made and what you're trying to get to. The beauty of it is that it isn't weighed down by too much information. It gives a good overview of exactly what it says: Electrons in Solids.